Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Abstract Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement result...

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Bibliographic Details
Main Authors: Yan Zhang, Qing Hua Ren, Xiao Jie Chai, Jun Jiang, Jian Guo Yang, An Quan Jiang
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
Tunnel switch
Mg-doped LiNbO3
Atomic layer deposition
Ion slicing
Ferroelectric memory
Online Access:http://link.springer.com/article/10.1186/s11671-019-2970-6

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http://link.springer.com/article/10.1186/s11671-019-2970-6

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