Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Abstract In this study, aluminum oxide (Al2O3) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O2), forming gas (FG), or two-step annealing. Minority carrier lifetime of the samples was measured by Sinton WCT-120. Field-effect...

Full description

Bibliographic Details
Main Authors: Chia-Hsun Hsu, Yun-Shao Cho, Wan-Yu Wu, Shui-Yang Lien, Xiao-Ying Zhang, Wen-Zhang Zhu, Sam Zhang, Song-Yan Chen
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
Passivated emitter and rear cell
Aluminum oxide
Atomic layer deposition
Passivation
Two-step annealing
Online Access:http://link.springer.com/article/10.1186/s11671-019-2969-z

Internet

http://link.springer.com/article/10.1186/s11671-019-2969-z

Similar Items