Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers
A plunger device for liquid epitaxy of АIIIВV semiconductor compositions has been modified. It has been shown that the impurity concentration gradient, creating inner electrical fields in the photodetecting and active regions of semiconductor structures, can be controlled by selecting the mechanism...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2007-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2007/6_2007/pdf/12.zip |