Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software i...

Full description

Bibliographic Details
Main Authors: Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Micromachines
Subjects:
4H-SiC
MESFET
IMRD structure
power added efficiency
Online Access:https://www.mdpi.com/2072-666X/10/7/479

Internet

https://www.mdpi.com/2072-666X/10/7/479

Similar Items