In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application
A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (RIE) of cubic crystalline III/V semiconductor sampl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5099526 |