Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric
The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physica...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2019-10-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/14363 |