In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is det...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4895345 |