In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is det...

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Main Authors: S. Nunomura, I. Sakata
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4895345
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spelling doaj-e1ba8530bc12454793a79995fb7dc4122020-11-25T01:06:00ZengAIP Publishing LLCAIP Advances2158-32262014-09-0149097110097110-610.1063/1.4895345006409ADVIn-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor depositionS. Nunomura0I. Sakata1Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, JapanResearch Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, JapanThe subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.http://dx.doi.org/10.1063/1.4895345
collection DOAJ
language English
format Article
sources DOAJ
author S. Nunomura
I. Sakata
spellingShingle S. Nunomura
I. Sakata
In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
AIP Advances
author_facet S. Nunomura
I. Sakata
author_sort S. Nunomura
title In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
title_short In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
title_full In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
title_fullStr In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
title_full_unstemmed In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
title_sort in-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2014-09-01
description The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.
url http://dx.doi.org/10.1063/1.4895345
work_keys_str_mv AT snunomura insitucharacterizationoftrappedchargesinamorphoussemiconductorfilmsduringplasmaenhancedchemicalvapordeposition
AT isakata insitucharacterizationoftrappedchargesinamorphoussemiconductorfilmsduringplasmaenhancedchemicalvapordeposition
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