Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures. We demonstrate that the additional lateral band-to-band-tunneling (L-BTBT) in the NTFETs owing to the core gate increases their OFF-state...
Main Authors: | , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8037985/ |