Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors
We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated outpu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4953809 |