Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack
The channel fluorine implantation (CFI) process was integrated with the Si3N4 contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO2/SiON) gate stack. The SiN CESL process clearly impr...
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| Format: | Article |
| Language: | English |
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MDPI AG
2014-03-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/7/3/2370 |