Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.

Bibliographic Details
Main Authors: Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska, Akiko Ueda, Yousang Won, Sinae Heo, Yesul Jeong, Yutaka Wakayama, Kazuhiro Marumoto
Format: Article
Language:English
Published: Nature Publishing Group 2021-03-01
Series:Communications Materials
Online Access:https://doi.org/10.1038/s43246-021-00129-y

Internet

https://doi.org/10.1038/s43246-021-00129-y

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