Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2021-03-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-021-00129-y |