Monolithically Integrated Ge-on-Si Active Photonics

Monolithically Integrated Ge-on-Si Active Photonics

Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si ph...

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Bibliographic Details
Main Author: Jifeng Liu
Format: Article
Language:English
Published: MDPI AG 2014-07-01
Series:Photonics
Subjects:
Ge
GeSi
GeSn
tensile strain
band engineering
integrated silicon photonics
optoelectronics
photodetectors
modulators
lasers
Online Access:http://www.mdpi.com/2304-6732/1/3/162

Internet

http://www.mdpi.com/2304-6732/1/3/162

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