Epitaxial growth of γ-Al2O3 on Ti2AlC(0001) by reactive high-power impulse magnetron sputtering
Al2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti2AlC(0001) thin films on α-Al2O3(0001) substrates. The Al2O3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al2O3(111) as shown by transmission electron microscop...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4863560 |