Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

<p>Abstract</p> <p>The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth exper...

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Bibliographic Details
Main Authors: Tchernycheva M, Dubrovskii VG, Sibirev NV, Cirlin GE, Sartel C, Harmand JC, Glas F, Zhang X
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Inclined GaAs nanowires
Molecular beam epitaxy
Surface diffusion
Online Access:http://dx.doi.org/10.1007/s11671-010-9698-7

Internet

http://dx.doi.org/10.1007/s11671-010-9698-7

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