Simulation of a 0.6 V Wideband CMOS LNA Design Using Forward Body Bias
A 0.6-V wideband Low-Noise Amplifier (LNA) design using a 0.18 μm CMOS standard process is presented in this paper. An important goal for the design is to achieve wideband under a low supply voltage. The presented LNA design is a three-stage amplifier, which is based on a common gate stage and two c...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Taiwan Association of Engineering and Technology Innovation
2019-07-01
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Series: | Proceedings of Engineering and Technology Innovation |
Subjects: | |
Online Access: | http://ojs.imeti.org/index.php/PETI/article/view/4261 |