Simulation of a 0.6 V Wideband CMOS LNA Design Using Forward Body Bias

Simulation of a 0.6 V Wideband CMOS LNA Design Using Forward Body Bias

A 0.6-V wideband Low-Noise Amplifier (LNA) design using a 0.18 μm CMOS standard process is presented in this paper. An important goal for the design is to achieve wideband under a low supply voltage. The presented LNA design is a three-stage amplifier, which is based on a common gate stage and two c...

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Bibliographic Details
Main Authors: Jian-Ming Wu, Chih-Yu Huang, Cheng-Shong Hong, You-Ruei Jhuang
Format: Article
Language:English
Published: Taiwan Association of Engineering and Technology Innovation 2019-07-01
Series:Proceedings of Engineering and Technology Innovation
Subjects:
low-noise amplifier (lna)
forward body bias
low voltage
wideband
Online Access:http://ojs.imeti.org/index.php/PETI/article/view/4261

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