Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

Abstract The influence of quantum-well (QW) width on electroluminescence properties of AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) was studied at different temperatures. The maximum external quantum efficiency (EQE) ratios of LED with 3.5 nm QW to that with 2 nm increased from 6.8 at roo...

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Bibliographic Details
Main Authors: Shuxin Tan, Jicai Zhang, Takashi Egawa, Gang Chen, Xiangdong Luo, Ling Sun, Youhua Zhu
Format: Article
Language:English
Published: SpringerOpen 2018-10-01
Series:Nanoscale Research Letters
Subjects:
Deep ultraviolet light-emitting diodes
AlGaN
External quantum efficiency
Electroluminescence
Low temperature
Online Access:http://link.springer.com/article/10.1186/s11671-018-2756-2

Internet

http://link.springer.com/article/10.1186/s11671-018-2756-2

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