Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash
An anomalous threshold-voltage (<inline-formula> <tex-math notation="LaTeX">$V_{t} $ </tex-math></inline-formula>) spread of the program-inhibited cell is investigated for the first time in NAND flash memory. The program disturb characteristics are studied by applyi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7467394/ |