Overview of radiation effects on emerging non-volatile memory technologies

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented...

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Main Authors: Fetahović Irfan S., Dolićanin Edin, Lazarević Đorđe R., Lončar Boris B.
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2017-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2017/1451-39941704381F.pdf
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spelling doaj-e4836466d5ae4fb0b9b873a91c791e732020-11-25T00:17:11ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39941452-81852017-01-0132438139210.2298/NTRP1704381F1451-39941704381FOverview of radiation effects on emerging non-volatile memory technologiesFetahović Irfan S.0Dolićanin Edin1Lazarević Đorđe R.2Lončar Boris B.3State University of Novi Pazar, Novi PazarState University of Novi Pazar, Novi PazarVinča Institute of Nuclear Sciences, BelgradeFaculty of Technology and Metallurgy, BelgradeIn this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007]http://www.doiserbia.nb.rs/img/doi/1451-3994/2017/1451-39941704381F.pdfnon-volatile memoryradiation effectresistive RAMferroelectric RAMmagneto-resistive RAMphase change memory
collection DOAJ
language English
format Article
sources DOAJ
author Fetahović Irfan S.
Dolićanin Edin
Lazarević Đorđe R.
Lončar Boris B.
spellingShingle Fetahović Irfan S.
Dolićanin Edin
Lazarević Đorđe R.
Lončar Boris B.
Overview of radiation effects on emerging non-volatile memory technologies
Nuclear Technology and Radiation Protection
non-volatile memory
radiation effect
resistive RAM
ferroelectric RAM
magneto-resistive RAM
phase change memory
author_facet Fetahović Irfan S.
Dolićanin Edin
Lazarević Đorđe R.
Lončar Boris B.
author_sort Fetahović Irfan S.
title Overview of radiation effects on emerging non-volatile memory technologies
title_short Overview of radiation effects on emerging non-volatile memory technologies
title_full Overview of radiation effects on emerging non-volatile memory technologies
title_fullStr Overview of radiation effects on emerging non-volatile memory technologies
title_full_unstemmed Overview of radiation effects on emerging non-volatile memory technologies
title_sort overview of radiation effects on emerging non-volatile memory technologies
publisher VINCA Institute of Nuclear Sciences
series Nuclear Technology and Radiation Protection
issn 1451-3994
1452-8185
publishDate 2017-01-01
description In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007]
topic non-volatile memory
radiation effect
resistive RAM
ferroelectric RAM
magneto-resistive RAM
phase change memory
url http://www.doiserbia.nb.rs/img/doi/1451-3994/2017/1451-39941704381F.pdf
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