A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

This study presents a 2–20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achi...

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Bibliographic Details
Main Authors: Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
Format: Article
Language:English
Published: The Korean Institute of Electromagnetic Engineering and Science 2017-10-01
Series:Journal of the Korean Institute of Electromagnetic Engineering and Science
Subjects:
Decade Bandwidth
Distributed Power Amplifier
High Power Amplifier
MMIC
0.25 μm AlGaN/GaN HEMT
Online Access:http://jees.kr/upload/pdf/jees-2017-17-4-178.pdf

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http://jees.kr/upload/pdf/jees-2017-17-4-178.pdf

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