A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
This study presents a 2–20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achi...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
The Korean Institute of Electromagnetic Engineering and Science
2017-10-01
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Series: | Journal of the Korean Institute of Electromagnetic Engineering and Science |
Subjects: | |
Online Access: | http://jees.kr/upload/pdf/jees-2017-17-4-178.pdf |