Border Trap Characterizations of Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Border Trap Characterizations of Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

This study represents a comparison of the border trap behavior and reliability between HfO<sub>2</sub> and ZrO<sub>2</sub> films on <i>n</i>-In<sub>0.53</sub>Ga<sub>0.47</sub>As with an Al<sub>2</sub>O<sub>3</sub> in...

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Bibliographic Details
Main Authors: Md. Mamunur Rahman, Dae-Hyun Kim, Tae-Woo Kim
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Nanomaterials
Subjects:
iii–v semiconductor
atomic layer deposition
border trap
constant voltage stress
high-<i>k</i>
interface trap
post metal annealing
Online Access:https://www.mdpi.com/2079-4991/10/3/527

Internet

https://www.mdpi.com/2079-4991/10/3/527

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