Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed....
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Stefan cel Mare University of Suceava
2016-05-01
|
| Series: | Advances in Electrical and Computer Engineering |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.4316/AECE.2016.02011 |