Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Stefan cel Mare University of Suceava
2016-05-01
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| Series: | Advances in Electrical and Computer Engineering |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.4316/AECE.2016.02011 |
| Summary: | The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity
memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance
change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor
memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated.
A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different
number of states in a single memristor. New state variation parameters associated with the utilized model
are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE
simulations are also held, and they show a good agreement with the data obtained from the analysis. |
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| ISSN: | 1582-7445 1844-7600 |