Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of ind...
| Main Authors: | , |
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| Format: | Article |
| Language: | Arabic |
| Published: |
College of Education for Pure Sciences
2008-06-01
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| Series: | مجلة التربية والعلم |
| Subjects: | |
| Online Access: | https://edusj.mosuljournals.com/article_51284_e027c198df88870aacddba75fb99cfa3.pdf |