Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of ind...

Full description

Bibliographic Details
Main Authors: Slah Sheet, Hazim Mahmoud
Format: Article
Language:Arabic
Published: College of Education for Pure Sciences 2008-06-01
Series:مجلة التربية والعلم
Subjects:
ion implementation
depth measurement
doped ions
Online Access:https://edusj.mosuljournals.com/article_51284_e027c198df88870aacddba75fb99cfa3.pdf
id doaj-e61f05cced3c4baa993fe49a1e88b8e4
record_format Article
spelling doaj-e61f05cced3c4baa993fe49a1e88b8e42020-11-25T00:26:40ZaraCollege of Education for Pure Sciencesمجلة التربية والعلم1812-125X2664-25302008-06-012121610.33899/edusj.2008.5128451284Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA techniqueSlah SheetHazim MahmoudAbstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of indium ion implantion in P-N Junction silicon semiconductor sample , which has been prepared by using pulse dense plasma focus . Such determination was depend on the chemical shift of the silicon spectrum. The prepared sample was scraped until the above noted chemical shift was disappeared. From this technique the depth of indium doped in the silicon sample was found to be about 450 A° .https://edusj.mosuljournals.com/article_51284_e027c198df88870aacddba75fb99cfa3.pdfion implementationdepth measurementdoped ions
collection DOAJ
language Arabic
format Article
sources DOAJ
author Slah Sheet
Hazim Mahmoud
spellingShingle Slah Sheet
Hazim Mahmoud
Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
مجلة التربية والعلم
ion implementation
depth measurement
doped ions
author_facet Slah Sheet
Hazim Mahmoud
author_sort Slah Sheet
title Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
title_short Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
title_full Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
title_fullStr Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
title_full_unstemmed Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
title_sort measurement of the doped ion depth of junction semiconductor prepared by ion implementation using esca technique
publisher College of Education for Pure Sciences
series مجلة التربية والعلم
issn 1812-125X
2664-2530
publishDate 2008-06-01
description Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of indium ion implantion in P-N Junction silicon semiconductor sample , which has been prepared by using pulse dense plasma focus . Such determination was depend on the chemical shift of the silicon spectrum. The prepared sample was scraped until the above noted chemical shift was disappeared. From this technique the depth of indium doped in the silicon sample was found to be about 450 A° .
topic ion implementation
depth measurement
doped ions
url https://edusj.mosuljournals.com/article_51284_e027c198df88870aacddba75fb99cfa3.pdf
work_keys_str_mv AT slahsheet measurementofthedopediondepthofjunctionsemiconductorpreparedbyionimplementationusingescatechnique
AT hazimmahmoud measurementofthedopediondepthofjunctionsemiconductorpreparedbyionimplementationusingescatechnique
_version_ 1725343388787539968

Similar Items