A type-II WSe2/HfSe2 van der Waals heterostructure with adjustable electronic and optical properties

The construction of van der Waals (vdW) heterostructures is an efficient strategy for attaining more desired specifications. According to first-principles calculations, the WSe2/HfSe2 vdW heterostructure has an indirect band gap from K point to M point with the value of 0.21 eV. A conventional type-...

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Bibliographic Details
Main Authors: Weiwei Ju, Yi Zhang, Tongwei Li, Donghui Wang, Enqin Zhao, Guangxiong Hu, Yanmin Xu, Haisheng Li
Format: Article
Language:English
Published: Elsevier 2021-06-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721003909