A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer
Abstract SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connecti...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-11-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12188 |