Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

<p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force m...

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Bibliographic Details
Main Authors: Hakkarainen Teemu, Schramm Andreas, Tukiainen Antti, Ahorinta Risto, Toikkanen Lauri, Guina Mircea
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Molecular beam epitaxy
III-V semiconductors
Quantum dots
Ordering
InAs
GaInP
Online Access:http://dx.doi.org/10.1007/s11671-010-9747-2

Internet

http://dx.doi.org/10.1007/s11671-010-9747-2

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