Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
<p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force m...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2010-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://dx.doi.org/10.1007/s11671-010-9747-2 |