Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power
With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z<sup>2&...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8673739/ |