990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect

990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect

High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance a...

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Bibliographic Details
Main Authors: Yu-Xin Lei, Yong-Yi Chen, Feng Gao, De-Zheng Ma, Peng Jia, Qiu Cheng, Hao Wu, Chun-Kao Ruan, Lei Liang, Chao Chen, Jun Zhang, Jing-Yu Tian, Li Qin, Yong-Qiang Ning, Li-Jun Wang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor lasers
gain-coupled DFB
single-longitudinal mode
narrow linewidth
Online Access:https://ieeexplore.ieee.org/document/8618361/

Internet

https://ieeexplore.ieee.org/document/8618361/

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