Upping the internal quantum efficiency of green light‐emitting diodes by employing a graded AlGaN barrier and an electron blocking layer
Abstract Two different device structures are numerically studied, and their optoelectronic characteristics with standard structure are compared. The authors minimized the uneven carrier distribution across the active region. By replacing the first quantum barrier with graded AlGaN and using a graded...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-02-01
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| Series: | IET Optoelectronics |
| Online Access: | https://doi.org/10.1049/ote2.12016 |