Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation
This paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conduc...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-03-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/14/6/1355 |
id |
doaj-e856bfff24224353a0e91847e8fc10f6 |
---|---|
record_format |
Article |
spelling |
doaj-e856bfff24224353a0e91847e8fc10f62021-03-12T00:02:07ZengMDPI AGMaterials1996-19442021-03-01141355135510.3390/ma14061355Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer PreparationChunliang Kuo0Yupang Nien1Anchun Chiang2Atsushi Hirata3Department of Mechanical Engineering, National Taiwan University of Science and Technology, #43, Sec. 4, Keelung Road, Taipei 106, TaiwanDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, #43, Sec. 4, Keelung Road, Taipei 106, TaiwanDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, #43, Sec. 4, Keelung Road, Taipei 106, TaiwanSchool of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, JapanThis paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conductivity and alter surface topography regardless of the silicon’s crystallographic structure and diamond-type lattice. This in-process surface modification technique was shown to promote material removal and simultaneously preserve the integrity of the machined surfaces with preferable surface textures. In the validation experiment, the 25 mm-thick assisting electrodes deposited a notable concentration of aluminium on the machined surface (~3.87 wt %), which greatly accelerated the rate of material removal (~9.42 mg/s) with minimal surface roughness (S<sub>a</sub> ~5.49 μm) and moderate skewness (−0.23). The parameter combination used to obtain the optimal surface roughness (S<sub>a</sub> 2.54 μm) was as follows: open voltage (80 V), electrical resistance (1.7 Ω), pulse-on time (30 μs), and electrode thickness (15 mm). In multiple objective optimization, the preferred parameter combination (open voltage = 80 V, resistance = 1.4 Ω, pulse-on time = 60 μs, and assisting electrode thickness = 25 mm) achieved the following appreciable results: surface modification of 3.26 ± 0.61 wt %, material removal rate of 7.08 ± 2.2 mg/min, and surface roughness of S<sub>a</sub> = 4.3 ± 1.67 μm.https://www.mdpi.com/1996-1944/14/6/1355WEDMassisting electrodesurface modificationmaterial removalsurface topographyparametric optimization |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chunliang Kuo Yupang Nien Anchun Chiang Atsushi Hirata |
spellingShingle |
Chunliang Kuo Yupang Nien Anchun Chiang Atsushi Hirata Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation Materials WEDM assisting electrode surface modification material removal surface topography parametric optimization |
author_facet |
Chunliang Kuo Yupang Nien Anchun Chiang Atsushi Hirata |
author_sort |
Chunliang Kuo |
title |
Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation |
title_short |
Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation |
title_full |
Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation |
title_fullStr |
Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation |
title_full_unstemmed |
Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation |
title_sort |
surface modification using assisting electrodes in wire electrical discharge machining for silicon wafer preparation |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2021-03-01 |
description |
This paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conductivity and alter surface topography regardless of the silicon’s crystallographic structure and diamond-type lattice. This in-process surface modification technique was shown to promote material removal and simultaneously preserve the integrity of the machined surfaces with preferable surface textures. In the validation experiment, the 25 mm-thick assisting electrodes deposited a notable concentration of aluminium on the machined surface (~3.87 wt %), which greatly accelerated the rate of material removal (~9.42 mg/s) with minimal surface roughness (S<sub>a</sub> ~5.49 μm) and moderate skewness (−0.23). The parameter combination used to obtain the optimal surface roughness (S<sub>a</sub> 2.54 μm) was as follows: open voltage (80 V), electrical resistance (1.7 Ω), pulse-on time (30 μs), and electrode thickness (15 mm). In multiple objective optimization, the preferred parameter combination (open voltage = 80 V, resistance = 1.4 Ω, pulse-on time = 60 μs, and assisting electrode thickness = 25 mm) achieved the following appreciable results: surface modification of 3.26 ± 0.61 wt %, material removal rate of 7.08 ± 2.2 mg/min, and surface roughness of S<sub>a</sub> = 4.3 ± 1.67 μm. |
topic |
WEDM assisting electrode surface modification material removal surface topography parametric optimization |
url |
https://www.mdpi.com/1996-1944/14/6/1355 |
work_keys_str_mv |
AT chunliangkuo surfacemodificationusingassistingelectrodesinwireelectricaldischargemachiningforsiliconwaferpreparation AT yupangnien surfacemodificationusingassistingelectrodesinwireelectricaldischargemachiningforsiliconwaferpreparation AT anchunchiang surfacemodificationusingassistingelectrodesinwireelectricaldischargemachiningforsiliconwaferpreparation AT atsushihirata surfacemodificationusingassistingelectrodesinwireelectricaldischargemachiningforsiliconwaferpreparation |
_version_ |
1724223552613253120 |