New Findings on the Drain-Induced Barrier Lowering Characteristics for Tri-Gate Germanium-on-Insulator p-MOSFETs
This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics for tri-gate germanium-on-insulator (GeOI) p-MOSFETs through theoretical calculation by analytical solution of 3-D Poisson's equation corroborated with TCAD numerical simulation. It is found that, relati...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7234846/ |