A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0....

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Bibliographic Details
Main Authors: Dmytro Kundys, Danny Sutherland, Matthew J. Davies, Fabrice Oehler, James Griffiths, Philip Dawson, Menno J. Kappers, Colin J. Humphreys, Stefan Schulz, Fengzai Tang, Rachel A. Oliver
Format: Article
Language:English
Published: Taylor & Francis Group 2016-01-01
Series:Science and Technology of Advanced Materials
Subjects:
ingan
quantum wells
polarised light
non-polar
Online Access:http://dx.doi.org/10.1080/14686996.2016.1244474

Internet

http://dx.doi.org/10.1080/14686996.2016.1244474

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