A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0....
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doaj-e879bb8d4ef944b6835e4f12905089c12021-07-06T11:30:14ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142016-01-0117173674310.1080/14686996.2016.12444741244474A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substratesDmytro Kundys0Danny Sutherland1Matthew J. Davies2Fabrice Oehler3James Griffiths4Philip Dawson5Menno J. Kappers6Colin J. Humphreys7Stefan Schulz8Fengzai Tang9Rachel A. Oliver10School of Physics and Astronomy, Photon Science Institute, University of ManchesterSchool of Physics and Astronomy, Photon Science Institute, University of ManchesterSchool of Physics and Astronomy, Photon Science Institute, University of ManchesterDepartment of Materials Science and Metallurgy, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeSchool of Physics and Astronomy, Photon Science Institute, University of ManchesterDepartment of Materials Science and Metallurgy, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgePhotonics Theory Group, Tyndall National InstituteDepartment of Materials Science and Metallurgy, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeWe report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are broad with full width at half maximum height increasing from 81 to 330 meV as the In fraction increases. Photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-bands to lie in the range of 23–54 meV for the a- and m-plane samples in which we could observe distinct exciton features. Thus the thermal occupation of a higher valence sub-band cannot be responsible for the reduction of the degree of linear polarisation at 10 K. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which is at least partly responsible for the reduction in the degree of linear polarisation.http://dx.doi.org/10.1080/14686996.2016.1244474inganquantum wellspolarised lightnon-polar |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Dmytro Kundys Danny Sutherland Matthew J. Davies Fabrice Oehler James Griffiths Philip Dawson Menno J. Kappers Colin J. Humphreys Stefan Schulz Fengzai Tang Rachel A. Oliver |
spellingShingle |
Dmytro Kundys Danny Sutherland Matthew J. Davies Fabrice Oehler James Griffiths Philip Dawson Menno J. Kappers Colin J. Humphreys Stefan Schulz Fengzai Tang Rachel A. Oliver A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates Science and Technology of Advanced Materials ingan quantum wells polarised light non-polar |
author_facet |
Dmytro Kundys Danny Sutherland Matthew J. Davies Fabrice Oehler James Griffiths Philip Dawson Menno J. Kappers Colin J. Humphreys Stefan Schulz Fengzai Tang Rachel A. Oliver |
author_sort |
Dmytro Kundys |
title |
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates |
title_short |
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates |
title_full |
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates |
title_fullStr |
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates |
title_full_unstemmed |
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates |
title_sort |
study of the optical and polarisation properties of ingan/gan multiple quantum wells grown on a-plane and m-plane gan substrates |
publisher |
Taylor & Francis Group |
series |
Science and Technology of Advanced Materials |
issn |
1468-6996 1878-5514 |
publishDate |
2016-01-01 |
description |
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are broad with full width at half maximum height increasing from 81 to 330 meV as the In fraction increases. Photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-bands to lie in the range of 23–54 meV for the a- and m-plane samples in which we could observe distinct exciton features. Thus the thermal occupation of a higher valence sub-band cannot be responsible for the reduction of the degree of linear polarisation at 10 K. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which is at least partly responsible for the reduction in the degree of linear polarisation. |
topic |
ingan quantum wells polarised light non-polar |
url |
http://dx.doi.org/10.1080/14686996.2016.1244474 |
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