Influence of γ-Irradiation on the Structural Properties of Indium Monoselenide Crystals
Indium monoselenide (InSe) which is a layered semiconductor whose energy gap is 1.24 eV has received attention because of its potential applications in optoelectronic devices. In the present work n-type InSe crystals were grown by a special modification of the vertical Bridgman technique. X-ray Diff...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
D. G. Pylarinos
2016-12-01
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| Series: | Engineering, Technology & Applied Science Research |
| Subjects: | |
| Online Access: | https://etasr.com/index.php/ETASR/article/view/703 |