Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during g...

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Bibliographic Details
Main Authors: Matthias Steidl, Mingjian Wu, Katharina Peh, Peter Kleinschmidt, Erdmann Spiecker, Thomas Hannappel
Format: Article
Language:English
Published: SpringerOpen 2018-12-01
Series:Nanoscale Research Letters
Subjects:
III–V nanowires
Dilute nitride
Vapor-liquid-solid growth
Mixed dislocations
Stacking faults
Online Access:http://link.springer.com/article/10.1186/s11671-018-2833-6

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http://link.springer.com/article/10.1186/s11671-018-2833-6

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