Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

• Main Authors: Matthias Steidl, Mingjian Wu, Katharina Peh, Peter Kleinschmidt, Erdmann Spiecker, Thomas Hannappel
• Format: Article
• Language: English
• Published: SpringerOpen 2018-12-01
• Series: Nanoscale Research Letters
• Subjects: III–V nanowires; Dilute nitride; Vapor-liquid-solid growth; Mixed dislocations; Stacking faults
• Online Access: http://link.springer.com/article/10.1186/s11671-018-2833-6

Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via the Au-catalyzed vapor-liquid-solid (VLS) mechanism. The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering. Analysis of the crystal structure of NWs with and without N reveals zinc blende structure with an intermediate amount of stacking faults (SF). Interestingly, N incorporation leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction.