Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during g...
Main Authors: | Matthias Steidl, Mingjian Wu, Katharina Peh, Peter Kleinschmidt, Erdmann Spiecker, Thomas Hannappel |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-12-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2833-6 |
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