Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
The transparency of oxide semiconductors is a significant feature that enables the fabrication of fully transparent electronics. Unfortunately, practical transparent electronics using amorphous oxide semiconductors (AOSs) have not yet been realized, owing to significant photo-instabilities of these...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5053762 |