Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4897378 |