Effect of aluminum interfacial layer in a niobium oxide based resistive RAM
Resistive RAM (Random Access Memory) has good scalability with high switching speed and low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2019-07-01
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| Series: | Solid State Electronics Letters |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208819300195 |