Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization...

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Bibliographic Details
Main Authors: T. Nowozin, A. Wiengarten, L. Bonato, D. Bimberg, Wei-Hsun Lin, Shih-Yen Lin, M. N. Ajour, K. Daqrouq, A. S. Balamesh
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:Journal of Nanotechnology
Online Access:http://dx.doi.org/10.1155/2013/302647

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http://dx.doi.org/10.1155/2013/302647

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