Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots
The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
|
| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2013/302647 |
| id |
doaj-e9e912f65e0f4c068f0b63d1417212a1 |
|---|---|
| record_format |
Article |
| spelling |
doaj-e9e912f65e0f4c068f0b63d1417212a12020-11-24T23:27:07ZengHindawi LimitedJournal of Nanotechnology1687-95031687-95112013-01-01201310.1155/2013/302647302647Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum DotsT. Nowozin0A. Wiengarten1L. Bonato2D. Bimberg3Wei-Hsun Lin4Shih-Yen Lin5M. N. Ajour6K. Daqrouq7A. S. Balamesh8Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, GermanyResearch Center for Applied Sciences, Academia Sinica, Taipei 11529, TaiwanResearch Center for Applied Sciences, Academia Sinica, Taipei 11529, TaiwanElectric and Computer Engineering Department, King Abdulaziz University, Jeddah 21589, Saudi ArabiaElectric and Computer Engineering Department, King Abdulaziz University, Jeddah 21589, Saudi ArabiaElectric and Computer Engineering Department, King Abdulaziz University, Jeddah 21589, Saudi ArabiaThe electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured (1·10−16 cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble.http://dx.doi.org/10.1155/2013/302647 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
T. Nowozin A. Wiengarten L. Bonato D. Bimberg Wei-Hsun Lin Shih-Yen Lin M. N. Ajour K. Daqrouq A. S. Balamesh |
| spellingShingle |
T. Nowozin A. Wiengarten L. Bonato D. Bimberg Wei-Hsun Lin Shih-Yen Lin M. N. Ajour K. Daqrouq A. S. Balamesh Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots Journal of Nanotechnology |
| author_facet |
T. Nowozin A. Wiengarten L. Bonato D. Bimberg Wei-Hsun Lin Shih-Yen Lin M. N. Ajour K. Daqrouq A. S. Balamesh |
| author_sort |
T. Nowozin |
| title |
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots |
| title_short |
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots |
| title_full |
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots |
| title_fullStr |
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots |
| title_full_unstemmed |
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots |
| title_sort |
electronic properties and density of states of self-assembled gasb/gaas quantum dots |
| publisher |
Hindawi Limited |
| series |
Journal of Nanotechnology |
| issn |
1687-9503 1687-9511 |
| publishDate |
2013-01-01 |
| description |
The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured (1·10−16 cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble. |
| url |
http://dx.doi.org/10.1155/2013/302647 |
| work_keys_str_mv |
AT tnowozin electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT awiengarten electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT lbonato electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT dbimberg electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT weihsunlin electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT shihyenlin electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT mnajour electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT kdaqrouq electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots AT asbalamesh electronicpropertiesanddensityofstatesofselfassembledgasbgaasquantumdots |
| _version_ |
1725553308544794624 |