III-Nitride Deep UV LED Without Electron Blocking Layer

III-Nitride Deep UV LED Without Electron Blocking Layer

AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficien...

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Bibliographic Details
Main Authors: Zhongjie Ren, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
Aluminum gallium nitride
deep UV LED
electron blocking
electron containing
electron overflow.
Online Access:https://ieeexplore.ieee.org/document/8656506/

Internet

https://ieeexplore.ieee.org/document/8656506/

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