Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is nec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/11/5/2210 |