Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

The impact of linear correlation between lognormal distribution grain size mean and sigma along the polysilicon channel on threshold voltage (Vth) variability has been investigated in three dimensional (3D) NAND flash. The variety of grain size mean and sigma results in the unstable Vth variability....

Full description

Bibliographic Details
Main Authors: Tao Yang, Zhiliang Xia, Dandan Shi, Yingjie Ouyang, Zongliang Huo
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Lognormal distribution
3D NAND
polysilicon channel
grain size
Online Access:https://ieeexplore.ieee.org/document/8976155/

Internet

https://ieeexplore.ieee.org/document/8976155/

Similar Items