In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.

Bibliographic Details
Main Authors: Ayaskanta Sahu, Boris Russ, Miao Liu, Fan Yang, Edmond W. Zaia, Madeleine P. Gordon, Jason D. Forster, Ya-Qian Zhang, Mary C. Scott, Kristin A. Persson, Nelson E. Coates, Rachel A. Segalman, Jeffrey J. Urban
Format: Article
Language:English
Published: Nature Publishing Group 2020-04-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-15933-2

Internet

https://doi.org/10.1038/s41467-020-15933-2

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